Tunable electronic properties of silicene/GaP heterobilayer: Effects of electric field or biaxial tensile strain2018Β·Peng Zhang,Xibin Yang,Wei Wu,Lifen Tian,Heping Cui,Kai Zheng,Junke Jiang,Xianping Chen,Huaiyu YeΒ· 0 min readTypeJournal articlePublicationChemical Physics Letters, 2018, 700, 114-121Publication date Apr 25, 2018Publication ResourcesDate source: Reviewed local CSV year.DOIYou May Also Be Interested InSuggested from shared publication tags: Interfaces, Heterostructures, Electronic Structure.InterfacesHeterostructuresElectronic StructureLow-Dimensional Materials2026Thickness-engineered GaN enables enhanced photovoltaic performance in Janus MoSSe/GaN heterostructure2026Structurally compatible InN/SiP vdW heterostructure with enhanced charge separation and stable H2O adsorption for efficient Z-scheme photocatalysis2025Unlocking a near 1 eV direct band gap, lattice-matched InNβAs heterostructure with moist resistance for enhanced optoelectronic applications2017First principle design of CdS/germanene heterostructures with tunable electronic and transport properties ← Stabilizing lead-free all-inorganic tin halide Perovskites by ion exchange 2018Adsorption of gas molecules on graphene-like InN monolayer: A first-principle study 2017 →
