Unlocking a near 1 eV direct band gap, lattice-matched InN–As heterostructure with moist resistance for enhanced optoelectronic applications
Aug 13, 2025·,,,,· 0 min read
Yee Hui Robin Chang
Keat Hoe Yeoh
Junke Jiang
Moi Hua Tuh
Qiuhua Liang
Publication Resources
Date source: RSC article citation and PubMed issue date (online first 28 July 2025).
PCCP 27(32), 2025 issue cover (not article-specific artwork). Copyright Royal Society of Chemistry. Image source.
Summary
First-principles calculations explore stacking-dependent electronic structure, carrier transport, and light absorption in lattice-matched InN–arsenene heterostructures.