Junke Jiang is a postdoctoral researcher at Institut FOTON, INSA Rennes, France. He obtained his doctoral degree in Physics from Eindhoven University of Technology, focusing on the optoelectronic properties and stability of lead-halide and lead-free perovskites. He has worked at ISCR—UMR CNRS 6226 and visited Universität Bremen, contributing to the development of methods for large-scale perovskite simulation and device optimization. Junke’s research interests include perovskite materials, computational materials science, and energy materials.
I am a post-doctoral researcher at Institut FOTON, INSA Rennes, exploring computational materials science from electronic-structure theory to device-level modelling.
Below are four current research directions.

Large-scale simulations to understand structural distortions, phase transitions, and their impact on optoelectronic properties and long-term device stability.

Atomistic modelling of defects, dopants, and heterostructures to control recombination, ion migration, and interfacial losses in energy materials.
Linking electronic-structure input to device models for transistors and optoelectronic devices, targeting efficient and stable operation.

Combining high-throughput calculations with machine learning to screen and design next-generation perovskite and 2D energy materials.